onsemi BSP52T1G NPN Darlington Transistor, 1 A 80 V HFE:2000, 4-Pin SOT-223

RS Stock No.: 178-7525Brand: onsemiManufacturers Part No.: BSP52T1G
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Technical documents

Specifications

Brand

onsemi

Transistor Type

NPN

Maximum Continuous Collector Current

1 A

Maximum Collector Emitter Voltage

80 V

Maximum Emitter Base Voltage

5 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

4

Transistor Configuration

Single

Number of Elements per Chip

1

Minimum DC Current Gain

2000

Maximum Base Emitter Saturation Voltage

1.9 V

Maximum Collector Base Voltage

90 V

Maximum Collector Emitter Saturation Voltage

1.3 V

Length

6.5mm

Height

1.57mm

Width

3.5mm

Minimum Operating Temperature

-65 °C

Dimensions

6.5 x 3.5 x 1.57mm

Maximum Operating Temperature

+150 °C

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P.O.A.

onsemi BSP52T1G NPN Darlington Transistor, 1 A 80 V HFE:2000, 4-Pin SOT-223

P.O.A.

onsemi BSP52T1G NPN Darlington Transistor, 1 A 80 V HFE:2000, 4-Pin SOT-223
Stock information temporarily unavailable.

Technical documents

Specifications

Brand

onsemi

Transistor Type

NPN

Maximum Continuous Collector Current

1 A

Maximum Collector Emitter Voltage

80 V

Maximum Emitter Base Voltage

5 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

4

Transistor Configuration

Single

Number of Elements per Chip

1

Minimum DC Current Gain

2000

Maximum Base Emitter Saturation Voltage

1.9 V

Maximum Collector Base Voltage

90 V

Maximum Collector Emitter Saturation Voltage

1.3 V

Length

6.5mm

Height

1.57mm

Width

3.5mm

Minimum Operating Temperature

-65 °C

Dimensions

6.5 x 3.5 x 1.57mm

Maximum Operating Temperature

+150 °C