onsemi FGH60T65SQD-F155, P-Channel IGBT, 60 A 650 V, 3-Pin TO-247 G03, Through Hole

Brand

Maximum Continuous Collector Current

60 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±30V

Maximum Power Dissipation

333 W

Number of Transistors

1

Package Type

TO-247 G03

Mounting Type

Through Hole

Channel Type

P

Pin Count

3

Transistor Configuration

Single

Dimensions

15.87 x 4.82 x 20.82mm

Minimum Operating Temperature

-55 °C

Gate Capacitance

3813pF

Maximum Operating Temperature

+175 °C

Energy Rating

50mJ

Country of Origin

China