onsemi FGH75T65SQDNL4, P-Channel IGBT, 200 A 650 V, 4-Pin TO-247, Through Hole

RS Stock No.: 181-1864Brand: onsemiManufacturers Part No.: FGH75T65SQDNL4
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Technical documents

Specifications

Brand

onsemi

Maximum Continuous Collector Current

200 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

375 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

P

Pin Count

4

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.8 x 5.2 x 22.74mm

Maximum Operating Temperature

+175 °C

Energy Rating

160mJ

Minimum Operating Temperature

-55 °C

Gate Capacitance

5100pF

Country of Origin

China

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P.O.A.

onsemi FGH75T65SQDNL4, P-Channel IGBT, 200 A 650 V, 4-Pin TO-247, Through Hole

450

Available in multiples of 1
450P.O.A.
900P.O.A.
1350P.O.A.
1800P.O.A.
2250P.O.A.
2700P.O.A.
3150P.O.A.
3600P.O.A.
4050P.O.A.
4500P.O.A.
4950P.O.A.
5400P.O.A.
5850P.O.A.
6300P.O.A.
6750P.O.A.

P.O.A.

onsemi FGH75T65SQDNL4, P-Channel IGBT, 200 A 650 V, 4-Pin TO-247, Through Hole
Stock information temporarily unavailable.

450

Available in multiples of 1
450P.O.A.
900P.O.A.
1350P.O.A.
1800P.O.A.
2250P.O.A.
2700P.O.A.
3150P.O.A.
3600P.O.A.
4050P.O.A.
4500P.O.A.
4950P.O.A.
5400P.O.A.
5850P.O.A.
6300P.O.A.
6750P.O.A.

Technical documents

Specifications

Brand

onsemi

Maximum Continuous Collector Current

200 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

375 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

P

Pin Count

4

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.8 x 5.2 x 22.74mm

Maximum Operating Temperature

+175 °C

Energy Rating

160mJ

Minimum Operating Temperature

-55 °C

Gate Capacitance

5100pF

Country of Origin

China