ON Semiconductor, FJP2145TU, Emmitter Switched, NPN Power Transistor 5 A 0.202V, 3-Pin TO-220

RS Stock No.: 864-8956Brand: onsemiManufacturers Part No.: FJP2145TU
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Technical documents

Specifications

Transistor Type

NPN

Maximum DC Collector Current

5 A

Package Type

TO-220

Mounting Type

Through Hole

Maximum Power Dissipation

120 W

Minimum DC Current Gain

8

Maximum Base Current

1.5A

Pin Count

3

Category

Power Transistor

Height

16.51mm

Minimum Operating Temperature

-55 °C

Dimensions

10.67 x 4.83 x 16.51mm

Maximum Operating Temperature

+125 °C

Length

10.67mm

Product details

ESBC™ Power Transistor, Fairchild Semiconductor

Bipolar NPN power transistors designed for use in ESBC™ (Emitter-Switched Bipolar/MOSFET Cascode) configurations together with appropriate power MOSFET devices. This power switch configuration provides increased efficiency, flexibility and robustness and driving power is minimized due to the absence of Miller capacitance in the design.

Bipolar Transistors, Fairchild Semiconductor

Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.

Stock information temporarily unavailable.

P.O.A.

ON Semiconductor, FJP2145TU, Emmitter Switched, NPN Power Transistor 5 A 0.202V, 3-Pin TO-220

P.O.A.

ON Semiconductor, FJP2145TU, Emmitter Switched, NPN Power Transistor 5 A 0.202V, 3-Pin TO-220
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Transistor Type

NPN

Maximum DC Collector Current

5 A

Package Type

TO-220

Mounting Type

Through Hole

Maximum Power Dissipation

120 W

Minimum DC Current Gain

8

Maximum Base Current

1.5A

Pin Count

3

Category

Power Transistor

Height

16.51mm

Minimum Operating Temperature

-55 °C

Dimensions

10.67 x 4.83 x 16.51mm

Maximum Operating Temperature

+125 °C

Length

10.67mm

Product details

ESBC™ Power Transistor, Fairchild Semiconductor

Bipolar NPN power transistors designed for use in ESBC™ (Emitter-Switched Bipolar/MOSFET Cascode) configurations together with appropriate power MOSFET devices. This power switch configuration provides increased efficiency, flexibility and robustness and driving power is minimized due to the absence of Miller capacitance in the design.

Bipolar Transistors, Fairchild Semiconductor

Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.