onsemi KSD2012GTU NPN Transistor, 3 A, 60 V, 3-Pin TO-220F
Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
3 A
Maximum Collector Emitter Voltage
60 V
Package Type
TO-220F
Mounting Type
Through Hole
Maximum Power Dissipation
25 W
Minimum DC Current Gain
150
Transistor Configuration
Single
Maximum Collector Base Voltage
60 V
Maximum Emitter Base Voltage
7 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.16 x 2.54 x 15.87mm
Product details
Power NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
P.O.A.
1
P.O.A.
Stock information temporarily unavailable.
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Stock information temporarily unavailable.
Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
3 A
Maximum Collector Emitter Voltage
60 V
Package Type
TO-220F
Mounting Type
Through Hole
Maximum Power Dissipation
25 W
Minimum DC Current Gain
150
Transistor Configuration
Single
Maximum Collector Base Voltage
60 V
Maximum Emitter Base Voltage
7 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.16 x 2.54 x 15.87mm
Product details
Power NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.