onsemi MJD122T4G NPN Darlington Transistor, 8 A 100 V HFE:100, 3-Pin DPAK
Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
8 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
5 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
100
Maximum Base Emitter Saturation Voltage
4.5 V
Maximum Collector Base Voltage
100 V
Maximum Collector Emitter Saturation Voltage
4 V
Maximum Collector Cut-off Current
0.01mA
Dimensions
6.73 x 6.22 x 2.38mm
Width
6.22mm
Minimum Operating Temperature
-65 °C
Length
6.73mm
Height
2.38mm
Maximum Operating Temperature
+150 °C
Country of Origin
Czech Republic
Product details
NPN Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
P.O.A.
1
P.O.A.
1
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Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
8 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
5 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
100
Maximum Base Emitter Saturation Voltage
4.5 V
Maximum Collector Base Voltage
100 V
Maximum Collector Emitter Saturation Voltage
4 V
Maximum Collector Cut-off Current
0.01mA
Dimensions
6.73 x 6.22 x 2.38mm
Width
6.22mm
Minimum Operating Temperature
-65 °C
Length
6.73mm
Height
2.38mm
Maximum Operating Temperature
+150 °C
Country of Origin
Czech Republic
Product details
NPN Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.