onsemi MJD31C1G NPN Transistor, 3 A, 100 V, 4-Pin IPAK

RS Stock No.: 178-4813Brand: onsemiManufacturers Part No.: MJD31C1G
brand-logo
View all in Bipolar Transistors

Technical documents

Specifications

Brand

onsemi

Transistor Type

NPN

Maximum DC Collector Current

3 A

Maximum Collector Emitter Voltage

100 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Maximum Power Dissipation

15 W

Minimum DC Current Gain

10

Transistor Configuration

Single

Maximum Collector Base Voltage

100 V dc

Maximum Emitter Base Voltage

5 V

Maximum Operating Frequency

1 MHz

Pin Count

4

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Dimensions

6.73 x 2.38 x 6.22mm

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

P.O.A.

onsemi MJD31C1G NPN Transistor, 3 A, 100 V, 4-Pin IPAK

75

Available in multiples of 75
75P.O.A.
150P.O.A.
225P.O.A.
300P.O.A.
375P.O.A.
450P.O.A.
525P.O.A.
600P.O.A.
675P.O.A.
750P.O.A.
825P.O.A.
900P.O.A.
975P.O.A.
1050P.O.A.
1125P.O.A.

P.O.A.

onsemi MJD31C1G NPN Transistor, 3 A, 100 V, 4-Pin IPAK
Stock information temporarily unavailable.

75

Available in multiples of 75
75P.O.A.
150P.O.A.
225P.O.A.
300P.O.A.
375P.O.A.
450P.O.A.
525P.O.A.
600P.O.A.
675P.O.A.
750P.O.A.
825P.O.A.
900P.O.A.
975P.O.A.
1050P.O.A.
1125P.O.A.

Technical documents

Specifications

Brand

onsemi

Transistor Type

NPN

Maximum DC Collector Current

3 A

Maximum Collector Emitter Voltage

100 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Maximum Power Dissipation

15 W

Minimum DC Current Gain

10

Transistor Configuration

Single

Maximum Collector Base Voltage

100 V dc

Maximum Emitter Base Voltage

5 V

Maximum Operating Frequency

1 MHz

Pin Count

4

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Dimensions

6.73 x 2.38 x 6.22mm