Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
8 A
Maximum Collector Emitter Voltage
80 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Maximum Power Dissipation
1.75 W
Minimum DC Current Gain
60
Transistor Configuration
Single
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
85 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
2.38 x 6.73 x 6.22mm
Country of Origin
Czech Republic
Product details
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.
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P.O.A.
75
P.O.A.
75
Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
8 A
Maximum Collector Emitter Voltage
80 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Maximum Power Dissipation
1.75 W
Minimum DC Current Gain
60
Transistor Configuration
Single
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
85 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
2.38 x 6.73 x 6.22mm
Country of Origin
Czech Republic
Product details
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.