Technical documents
Specifications
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-10 A
Maximum Collector Emitter Voltage
-80 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
36 W
Minimum DC Current Gain
60
Transistor Configuration
Isolated
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
20 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.63 x 4.9 x 16.12mm
Maximum Operating Temperature
+150 °C
Country of Origin
Korea, Republic Of
P.O.A.
Standard
1
P.O.A.
Stock information temporarily unavailable.
Standard
1
Stock information temporarily unavailable.
Technical documents
Specifications
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-10 A
Maximum Collector Emitter Voltage
-80 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
36 W
Minimum DC Current Gain
60
Transistor Configuration
Isolated
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
20 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.63 x 4.9 x 16.12mm
Maximum Operating Temperature
+150 °C
Country of Origin
Korea, Republic Of
