Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
15 A
Maximum Collector Emitter Voltage
200 V
Package Type
TO-3BPL
Mounting Type
Through Hole
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Collector Base Voltage
230 V
Maximum Emitter Base Voltage
7 V
Maximum Operating Frequency
30 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
26.4 x 20.3 x 5.3mm
Product details
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.
P.O.A.
Production pack (Tube)
20
P.O.A.
Stock information temporarily unavailable.
Production pack (Tube)
20
Stock information temporarily unavailable.
| quantity | Unit price |
|---|---|
| 20 - 38 | P.O.A. |
| 40+ | P.O.A. |
Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
15 A
Maximum Collector Emitter Voltage
200 V
Package Type
TO-3BPL
Mounting Type
Through Hole
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Collector Base Voltage
230 V
Maximum Emitter Base Voltage
7 V
Maximum Operating Frequency
30 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
26.4 x 20.3 x 5.3mm
Product details
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.
