onsemi MMBFJ111 N-Channel JFET, 15 V, Idss 20mA, 3-Pin SOT-23

RS Stock No.: 806-4311PBrand: onsemiManufacturers Part No.: MMBFJ111
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Technical documents

Specifications

Brand

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

20mA

Maximum Drain Source Voltage

15 V

Maximum Gate Source Voltage

-35 V

Maximum Drain Gate Voltage

35V

Configuration

Single

Transistor Configuration

Single

Maximum Drain Source Resistance

30 Ω

Mounting Type

Surface Mount

Package Type

SOT-23

Pin Count

3

Drain Gate On-Capacitance

28pF

Source Gate On-Capacitance

28pF

Dimensions

2.9 x 1.3 x 1.04mm

Width

1.3mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Length

2.9mm

Height

1.04mm

Product details

N-channel JFET, Fairchild Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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P.O.A.

onsemi MMBFJ111 N-Channel JFET, 15 V, Idss 20mA, 3-Pin SOT-23
Select packaging type

P.O.A.

onsemi MMBFJ111 N-Channel JFET, 15 V, Idss 20mA, 3-Pin SOT-23
Stock information temporarily unavailable.
Select packaging type

Technical documents

Specifications

Brand

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

20mA

Maximum Drain Source Voltage

15 V

Maximum Gate Source Voltage

-35 V

Maximum Drain Gate Voltage

35V

Configuration

Single

Transistor Configuration

Single

Maximum Drain Source Resistance

30 Ω

Mounting Type

Surface Mount

Package Type

SOT-23

Pin Count

3

Drain Gate On-Capacitance

28pF

Source Gate On-Capacitance

28pF

Dimensions

2.9 x 1.3 x 1.04mm

Width

1.3mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Length

2.9mm

Height

1.04mm

Product details

N-channel JFET, Fairchild Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.