onsemi MUN5212DW1T1G Dual NPN Digital Transistor, 100 mA, 50 V, 6-Pin SOT-363

RS Stock No.: 186-7183Brand: onsemiManufacturers Part No.: MUN5212DW1T1G
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Technical documents

Specifications

Brand

onsemi

Transistor Type

NPN

Maximum DC Collector Current

100 mA

Maximum Collector Emitter Voltage

50 V

Package Type

SOT-363

Mounting Type

Surface Mount

Maximum Power Dissipation

385 mW

Transistor Configuration

Dual

Pin Count

6

Number of Elements per Chip

2

Typical Resistor Ratio

1

Base-Emitter Resistor

22KΩ

Dimensions

2.2 x 1.35 x 1mm

Typical Input Resistor

22 kΩ

Maximum Operating Temperature

+150 °C

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Stock information temporarily unavailable.

P.O.A.

onsemi MUN5212DW1T1G Dual NPN Digital Transistor, 100 mA, 50 V, 6-Pin SOT-363

3000

Available in multiples of 3000
3000P.O.A.
6000P.O.A.
9000P.O.A.
12000P.O.A.
15000P.O.A.
18000P.O.A.
21000P.O.A.
24000P.O.A.
27000P.O.A.
30000P.O.A.
33000P.O.A.
36000P.O.A.
39000P.O.A.
42000P.O.A.
45000P.O.A.

P.O.A.

onsemi MUN5212DW1T1G Dual NPN Digital Transistor, 100 mA, 50 V, 6-Pin SOT-363
Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000P.O.A.
6000P.O.A.
9000P.O.A.
12000P.O.A.
15000P.O.A.
18000P.O.A.
21000P.O.A.
24000P.O.A.
27000P.O.A.
30000P.O.A.
33000P.O.A.
36000P.O.A.
39000P.O.A.
42000P.O.A.
45000P.O.A.

Technical documents

Specifications

Brand

onsemi

Transistor Type

NPN

Maximum DC Collector Current

100 mA

Maximum Collector Emitter Voltage

50 V

Package Type

SOT-363

Mounting Type

Surface Mount

Maximum Power Dissipation

385 mW

Transistor Configuration

Dual

Pin Count

6

Number of Elements per Chip

2

Typical Resistor Ratio

1

Base-Emitter Resistor

22KΩ

Dimensions

2.2 x 1.35 x 1mm

Typical Input Resistor

22 kΩ

Maximum Operating Temperature

+150 °C