Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
25 A
Maximum Collector Emitter Voltage
260 V
Package Type
TO-264
Mounting Type
Through Hole
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Collector Base Voltage
260 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Pin Count
5
Number of Elements per Chip
1
Dimensions
20.01 x 5.18 x 26.11mm
Maximum Operating Temperature
+150 °C
Country of Origin
Korea, Republic Of
P.O.A.
1
P.O.A.
Stock information temporarily unavailable.
1
Stock information temporarily unavailable.
Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
25 A
Maximum Collector Emitter Voltage
260 V
Package Type
TO-264
Mounting Type
Through Hole
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Collector Base Voltage
260 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Pin Count
5
Number of Elements per Chip
1
Dimensions
20.01 x 5.18 x 26.11mm
Maximum Operating Temperature
+150 °C
Country of Origin
Korea, Republic Of
