onsemi NXH100B120H3Q0STGOS Dual IGBT Module 1200 V, 22-Pin Q0BOOST, Surface Mount

RS Stock No.: 195-8771Brand: onsemiManufacturers Part No.: NXH100B120H3Q0STG
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Technical documents

Specifications

Brand

onsemi

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

186 W

Package Type

Q0BOOST

Configuration

Dual

Mounting Type

Surface Mount

Channel Type

N

Pin Count

22

Transistor Configuration

Dual

Dimensions

66.2 x 32.8 x 11.9mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-40 °C

Width

32.8mm

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P.O.A.

onsemi NXH100B120H3Q0STGOS Dual IGBT Module 1200 V, 22-Pin Q0BOOST, Surface Mount
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Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
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8P.O.A.
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12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

P.O.A.

onsemi NXH100B120H3Q0STGOS Dual IGBT Module 1200 V, 22-Pin Q0BOOST, Surface Mount
Stock information temporarily unavailable.
Select packaging type

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Technical documents

Specifications

Brand

onsemi

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

186 W

Package Type

Q0BOOST

Configuration

Dual

Mounting Type

Surface Mount

Channel Type

N

Pin Count

22

Transistor Configuration

Dual

Dimensions

66.2 x 32.8 x 11.9mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-40 °C

Width

32.8mm