QSD123 onsemi, ±12 ° IR Phototransistor, Through Hole 2-Pin T-1 3/4 package

RS Stock No.: 184-1083Brand: onsemiManufacturers Part No.: QSD123
brand-logo
View all in Phototransistors

Technical documents

Specifications

Brand

onsemi

Spectrums Detected

Infrared

Typical Fall Time

7µs

Typical Rise Time

7µs

Number of Channels

1

Maximum Dark Current

100nA

Angle of Half Sensitivity

±12 °

Number of Pins

2

Mounting Type

Through Hole

Package Type

T-1 3/4

Dimensions

6.1 Dia. x 8.77mm

Collector Current

16mA

Diameter

6.1mm

Maximum Wavelength Detected

880nm

Spectral Range of Sensitivity

880 nm

Emitter Collector Voltage

5V

Collector Emitter Voltage

30V

Output Signal Type

Phototransistor

Height

8.77mm

Saturation Voltage

0.4V

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

P.O.A.

QSD123 onsemi, ±12 ° IR Phototransistor, Through Hole 2-Pin T-1 3/4 package

P.O.A.

QSD123 onsemi, ±12 ° IR Phototransistor, Through Hole 2-Pin T-1 3/4 package
Stock information temporarily unavailable.

Technical documents

Specifications

Brand

onsemi

Spectrums Detected

Infrared

Typical Fall Time

7µs

Typical Rise Time

7µs

Number of Channels

1

Maximum Dark Current

100nA

Angle of Half Sensitivity

±12 °

Number of Pins

2

Mounting Type

Through Hole

Package Type

T-1 3/4

Dimensions

6.1 Dia. x 8.77mm

Collector Current

16mA

Diameter

6.1mm

Maximum Wavelength Detected

880nm

Spectral Range of Sensitivity

880 nm

Emitter Collector Voltage

5V

Collector Emitter Voltage

30V

Output Signal Type

Phototransistor

Height

8.77mm

Saturation Voltage

0.4V