Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
600 mA
Maximum Collector Emitter Voltage
160 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
160 V
Maximum Emitter Base Voltage
6 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
3.04 x 1.4 x 1.01mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
P.O.A.
1
P.O.A.
Stock information temporarily unavailable.
1
Stock information temporarily unavailable.
Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
600 mA
Maximum Collector Emitter Voltage
160 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
160 V
Maximum Emitter Base Voltage
6 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
3.04 x 1.4 x 1.01mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
