onsemi TIP117G PNP Darlington Transistor, 2 (Continuous) A, 4 (Peak) A 100 V dc HFE:500, 3-Pin TO-220

RS Stock No.: 184-1112Brand: onsemiManufacturers Part No.: TIP117G
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Technical documents

Specifications

Brand

onsemi

Transistor Type

PNP

Maximum Continuous Collector Current

2 (Continuous) A, 4 (Peak) A

Maximum Collector Emitter Voltage

100 V dc

Maximum Emitter Base Voltage

5 V dc

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Configuration

Single

Number of Elements per Chip

1

Minimum DC Current Gain

500

Maximum Collector Base Voltage

100 V dc

Maximum Collector Emitter Saturation Voltage

2.5 V dc

Maximum Collector Cut-off Current

2mA

Width

4.83mm

Maximum Power Dissipation

50 W

Minimum Operating Temperature

-65 °C

Dimensions

10.53 x 4.83 x 15.75mm

Maximum Operating Temperature

+150 °C

Length

10.53mm

Base Current

50mA

Height

15.75mm

Country of Origin

China

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P.O.A.

onsemi TIP117G PNP Darlington Transistor, 2 (Continuous) A, 4 (Peak) A 100 V dc HFE:500, 3-Pin TO-220

P.O.A.

onsemi TIP117G PNP Darlington Transistor, 2 (Continuous) A, 4 (Peak) A 100 V dc HFE:500, 3-Pin TO-220
Stock information temporarily unavailable.

Technical documents

Specifications

Brand

onsemi

Transistor Type

PNP

Maximum Continuous Collector Current

2 (Continuous) A, 4 (Peak) A

Maximum Collector Emitter Voltage

100 V dc

Maximum Emitter Base Voltage

5 V dc

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Configuration

Single

Number of Elements per Chip

1

Minimum DC Current Gain

500

Maximum Collector Base Voltage

100 V dc

Maximum Collector Emitter Saturation Voltage

2.5 V dc

Maximum Collector Cut-off Current

2mA

Width

4.83mm

Maximum Power Dissipation

50 W

Minimum Operating Temperature

-65 °C

Dimensions

10.53 x 4.83 x 15.75mm

Maximum Operating Temperature

+150 °C

Length

10.53mm

Base Current

50mA

Height

15.75mm

Country of Origin

China