onsemi TIP147G PNP Darlington Transistor, 10 A 100 V HFE:500, 3-Pin TO-247
Technical documents
Specifications
Brand
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
10 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
5 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
500
Maximum Base Emitter Saturation Voltage
3.5 V
Maximum Collector Base Voltage
100 V
Maximum Collector Emitter Saturation Voltage
3 V
Maximum Collector Cut-off Current
2mA
Height
5.3mm
Width
16.26mm
Maximum Power Dissipation
125 W
Minimum Operating Temperature
-65 °C
Dimensions
21.08 x 16.26 x 5.3mm
Maximum Operating Temperature
+150 °C
Length
21.08mm
Product details
PNP Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
P.O.A.
1
P.O.A.
1
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Technical documents
Specifications
Brand
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
10 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
5 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
500
Maximum Base Emitter Saturation Voltage
3.5 V
Maximum Collector Base Voltage
100 V
Maximum Collector Emitter Saturation Voltage
3 V
Maximum Collector Cut-off Current
2mA
Height
5.3mm
Width
16.26mm
Maximum Power Dissipation
125 W
Minimum Operating Temperature
-65 °C
Dimensions
21.08 x 16.26 x 5.3mm
Maximum Operating Temperature
+150 °C
Length
21.08mm
Product details
PNP Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.