Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
300 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
40 W
Minimum DC Current Gain
30
Transistor Configuration
Single
Maximum Collector Base Voltage
400 V dc
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
2 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.28 x 4.82 x 15.75mm
Maximum Operating Temperature
+150 °C
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P.O.A.
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P.O.A.
50
Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
300 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
40 W
Minimum DC Current Gain
30
Transistor Configuration
Single
Maximum Collector Base Voltage
400 V dc
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
2 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.28 x 4.82 x 15.75mm
Maximum Operating Temperature
+150 °C