OSI Optoelectronics, OSD60-5T IR Si Photodiode, Through Hole TO-8

RS Stock No.: 183-7173Brand: OSI OptoelectronicsManufacturers Part No.: OSD60-5T
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Technical documents

Specifications

Brand

OSI Optoelectronics

Spectrums Detected

Infrared

Wavelength of Peak Sensitivity

436nm

Package Type

TO-8

Mounting Type

Through Hole

Amplifier Function

No

Number of Pins

3

Diode Material

Si

Minimum Wavelength Detected

350nm

Maximum Wavelength Detected

1100nm

Height

0.17in

Diameter

13.97mm

Peak Photo Sensitivity

0.21A/W

Series

OSD

Polarity

Reverse

Typical Rise Time

30µs

Country of Origin

Malaysia

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P.O.A.

OSI Optoelectronics, OSD60-5T IR Si Photodiode, Through Hole TO-8

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

P.O.A.

OSI Optoelectronics, OSD60-5T IR Si Photodiode, Through Hole TO-8

Stock information temporarily unavailable.

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Stock information temporarily unavailable.

You may be interested in

Technical documents

Specifications

Brand

OSI Optoelectronics

Spectrums Detected

Infrared

Wavelength of Peak Sensitivity

436nm

Package Type

TO-8

Mounting Type

Through Hole

Amplifier Function

No

Number of Pins

3

Diode Material

Si

Minimum Wavelength Detected

350nm

Maximum Wavelength Detected

1100nm

Height

0.17in

Diameter

13.97mm

Peak Photo Sensitivity

0.21A/W

Series

OSD

Polarity

Reverse

Typical Rise Time

30µs

Country of Origin

Malaysia

You may be interested in