OSI Optoelectronics, PIN-3CDI IR Si Photodiode, Through Hole TO-18

RS Stock No.: 184-1891Brand: OSI OptoelectronicsManufacturers Part No.: PIN-3CDI
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Technical documents

Specifications

Brand

OSI Optoelectronics

Spectrums Detected

Infrared

Wavelength of Peak Sensitivity

970nm

Package Type

TO-18

Amplifier Function

No

Mounting Type

Through Hole

Number of Pins

3

Diode Material

Si

Minimum Wavelength Detected

350nm

Maximum Wavelength Detected

1100nm

Height

0.2in

Diameter

5.33mm

Series

Photoconductive

Typical Rise Time

10ns

Country of Origin

Malaysia

P.O.A.

OSI Optoelectronics, PIN-3CDI IR Si Photodiode, Through Hole TO-18

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

P.O.A.

OSI Optoelectronics, PIN-3CDI IR Si Photodiode, Through Hole TO-18

Stock information temporarily unavailable.

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Stock information temporarily unavailable.

Technical documents

Specifications

Brand

OSI Optoelectronics

Spectrums Detected

Infrared

Wavelength of Peak Sensitivity

970nm

Package Type

TO-18

Amplifier Function

No

Mounting Type

Through Hole

Number of Pins

3

Diode Material

Si

Minimum Wavelength Detected

350nm

Maximum Wavelength Detected

1100nm

Height

0.2in

Diameter

5.33mm

Series

Photoconductive

Typical Rise Time

10ns

Country of Origin

Malaysia