OSI Optoelectronics, PIN-6D IR Si Photodiode, Through Hole TO-8

RS Stock No.: 183-7137Brand: OSI OptoelectronicsManufacturers Part No.: PIN-6D
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Technical documents

Specifications

Brand

OSI Optoelectronics

Spectrums Detected

Infrared

Wavelength of Peak Sensitivity

970nm

Package Type

TO-8

Mounting Type

Through Hole

Amplifier Function

No

Number of Pins

2

Diode Material

Si

Minimum Wavelength Detected

350nm

Maximum Wavelength Detected

1100nm

Height

0.205in

Diameter

13.97mm

Peak Photo Sensitivity

0.65A/W

Series

PIN

Polarity

Reverse

Typical Rise Time

17ns

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P.O.A.

OSI Optoelectronics, PIN-6D IR Si Photodiode, Through Hole TO-8

10

Available in multiples of 10
10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.

P.O.A.

OSI Optoelectronics, PIN-6D IR Si Photodiode, Through Hole TO-8
Stock information temporarily unavailable.

10

Available in multiples of 10
10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.

Technical documents

Specifications

Brand

OSI Optoelectronics

Spectrums Detected

Infrared

Wavelength of Peak Sensitivity

970nm

Package Type

TO-8

Mounting Type

Through Hole

Amplifier Function

No

Number of Pins

2

Diode Material

Si

Minimum Wavelength Detected

350nm

Maximum Wavelength Detected

1100nm

Height

0.205in

Diameter

13.97mm

Peak Photo Sensitivity

0.65A/W

Series

PIN

Polarity

Reverse

Typical Rise Time

17ns