OSI Optoelectronics, UV-100L Si Photodiode, Through Hole Low Profile

RS Stock No.: 176-9786Brand: OSI OptoelectronicsManufacturers Part No.: UV-100L
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Technical documents

Specifications

Brand

OSI Optoelectronics

Wavelength of Peak Sensitivity

254nm

Package Type

Low Profile

Mounting Type

Through Hole

Amplifier Function

No

Number of Pins

3

Diode Material

Si

Minimum Wavelength Detected

UV-100L

Maximum Wavelength Detected

254nm

Length

24.76mm

Height

4.826mm

Diameter

25.4mm

Peak Photo Sensitivity

0.14A/W

Series

UV

Shunt Resistance

10000KΩ

Typical Rise Time

5.9ns

Country of Origin

United States

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P.O.A.

OSI Optoelectronics, UV-100L Si Photodiode, Through Hole Low Profile

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

P.O.A.

OSI Optoelectronics, UV-100L Si Photodiode, Through Hole Low Profile
Stock information temporarily unavailable.

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Technical documents

Specifications

Brand

OSI Optoelectronics

Wavelength of Peak Sensitivity

254nm

Package Type

Low Profile

Mounting Type

Through Hole

Amplifier Function

No

Number of Pins

3

Diode Material

Si

Minimum Wavelength Detected

UV-100L

Maximum Wavelength Detected

254nm

Length

24.76mm

Height

4.826mm

Diameter

25.4mm

Peak Photo Sensitivity

0.14A/W

Series

UV

Shunt Resistance

10000KΩ

Typical Rise Time

5.9ns

Country of Origin

United States