Renesas Electronics RJH65T14DPQ-A0#T0 IGBT, 100 A 650 V, 3-Pin TO-247A, Through Hole

RS Stock No.: 124-0908Brand: Renesas ElectronicsManufacturers Part No.: RJH65T14DPQ-A0#T0
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Technical documents

Specifications

Brand

Renesas Electronics

Maximum Continuous Collector Current

100 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±30V

Maximum Power Dissipation

250 W

Package Type

TO-247A

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.94 x 5.02 x 21.13mm

Gate Capacitance

1750pF

Maximum Operating Temperature

+175 °C

Country of Origin

China

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P.O.A.

Renesas Electronics RJH65T14DPQ-A0#T0 IGBT, 100 A 650 V, 3-Pin TO-247A, Through Hole

2

Available in multiples of 2
2P.O.A.
4P.O.A.
6P.O.A.
8P.O.A.
10P.O.A.
12P.O.A.
14P.O.A.
16P.O.A.
18P.O.A.
20P.O.A.
22P.O.A.
24P.O.A.
26P.O.A.
28P.O.A.
30P.O.A.

P.O.A.

Renesas Electronics RJH65T14DPQ-A0#T0 IGBT, 100 A 650 V, 3-Pin TO-247A, Through Hole
Stock information temporarily unavailable.

2

Available in multiples of 2
2P.O.A.
4P.O.A.
6P.O.A.
8P.O.A.
10P.O.A.
12P.O.A.
14P.O.A.
16P.O.A.
18P.O.A.
20P.O.A.
22P.O.A.
24P.O.A.
26P.O.A.
28P.O.A.
30P.O.A.

Technical documents

Specifications

Brand

Renesas Electronics

Maximum Continuous Collector Current

100 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±30V

Maximum Power Dissipation

250 W

Package Type

TO-247A

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.94 x 5.02 x 21.13mm

Gate Capacitance

1750pF

Maximum Operating Temperature

+175 °C

Country of Origin

China