ROHM RGT40NS65DGC9, P-Channel IGBT, 40 A 650 V, 3+Tab-Pin I2PAK, Through Hole

RS Stock No.: 171-5627Brand: ROHMManufacturers Part No.: RGT40NS65DGC9
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Technical documents

Specifications

Brand

ROHM

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

30V

Maximum Power Dissipation

161 W

Number of Transistors

1

Package Type

TO-262

Mounting Type

Through Hole

Channel Type

P

Pin Count

3+Tab

Transistor Configuration

Single

Dimensions

10.1 x 4.5 x 9mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

1070pF

Maximum Operating Temperature

+175 °C

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P.O.A.

ROHM RGT40NS65DGC9, P-Channel IGBT, 40 A 650 V, 3+Tab-Pin I2PAK, Through Hole

5

Available in multiples of 5
5P.O.A.
10P.O.A.
15P.O.A.
20P.O.A.
25P.O.A.
30P.O.A.
35P.O.A.
40P.O.A.
45P.O.A.
50P.O.A.
55P.O.A.
60P.O.A.
65P.O.A.
70P.O.A.
75P.O.A.

P.O.A.

ROHM RGT40NS65DGC9, P-Channel IGBT, 40 A 650 V, 3+Tab-Pin I2PAK, Through Hole
Stock information temporarily unavailable.

5

Available in multiples of 5
5P.O.A.
10P.O.A.
15P.O.A.
20P.O.A.
25P.O.A.
30P.O.A.
35P.O.A.
40P.O.A.
45P.O.A.
50P.O.A.
55P.O.A.
60P.O.A.
65P.O.A.
70P.O.A.
75P.O.A.

Technical documents

Specifications

Brand

ROHM

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

30V

Maximum Power Dissipation

161 W

Number of Transistors

1

Package Type

TO-262

Mounting Type

Through Hole

Channel Type

P

Pin Count

3+Tab

Transistor Configuration

Single

Dimensions

10.1 x 4.5 x 9mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

1070pF

Maximum Operating Temperature

+175 °C