ROHM RGW80TK65EC11 IGBT, 39 A 650 V, 3-Pin TO-3PFM, Through Hole

RS Stock No.: 185-1030Brand: ROHMManufacturers Part No.: RGW80TK65EC11
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Technical documents

Specifications

Brand

ROHM

Maximum Continuous Collector Current

39 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±30V

Number of Transistors

1

Maximum Power Dissipation

81 W

Package Type

TO-3PFM

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Dimensions

16 x 5 x 21mm

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-40 °C

Gate Capacitance

3320pF

Country of Origin

Thailand

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P.O.A.

ROHM RGW80TK65EC11 IGBT, 39 A 650 V, 3-Pin TO-3PFM, Through Hole

2

Available in multiples of 2
2P.O.A.
4P.O.A.
6P.O.A.
8P.O.A.
10P.O.A.
12P.O.A.
14P.O.A.
16P.O.A.
18P.O.A.
20P.O.A.
22P.O.A.
24P.O.A.
26P.O.A.
28P.O.A.
30P.O.A.

P.O.A.

ROHM RGW80TK65EC11 IGBT, 39 A 650 V, 3-Pin TO-3PFM, Through Hole
Stock information temporarily unavailable.

2

Available in multiples of 2
2P.O.A.
4P.O.A.
6P.O.A.
8P.O.A.
10P.O.A.
12P.O.A.
14P.O.A.
16P.O.A.
18P.O.A.
20P.O.A.
22P.O.A.
24P.O.A.
26P.O.A.
28P.O.A.
30P.O.A.

Technical documents

Specifications

Brand

ROHM

Maximum Continuous Collector Current

39 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±30V

Number of Transistors

1

Maximum Power Dissipation

81 W

Package Type

TO-3PFM

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Dimensions

16 x 5 x 21mm

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-40 °C

Gate Capacitance

3320pF

Country of Origin

Thailand