Technical documents
Specifications
Brand
ROHMChannel Type
P
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
20 V
Series
RTR030P02
Package Type
TSMT
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.7V
Maximum Power Dissipation
1 W
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Width
1.6mm
Length
2.9mm
Typical Gate Charge @ Vgs
9.3 nC @ 4.5 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.2V
Height
0.85mm
Product details
P-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
P.O.A.
1
P.O.A.
Stock information temporarily unavailable.
1
Stock information temporarily unavailable.
Technical documents
Specifications
Brand
ROHMChannel Type
P
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
20 V
Series
RTR030P02
Package Type
TSMT
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.7V
Maximum Power Dissipation
1 W
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Width
1.6mm
Length
2.9mm
Typical Gate Charge @ Vgs
9.3 nC @ 4.5 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.2V
Height
0.85mm
Product details
