Semikron Danfoss SEMiX303GB12E4p Series IGBT Module, 469 A 1200 V, 11-Pin SEMiX®3p, Through Hole
Technical documents
Specifications
Brand
Semikron DanfossMaximum Continuous Collector Current
469 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
20V
Configuration
Series
Package Type
SEMiX®3p
Mounting Type
Through Hole
Channel Type
N
Pin Count
11
Transistor Configuration
Series
Maximum Operating Temperature
+175 °C
Dimensions
150 x 62.4 x 17mm
Minimum Operating Temperature
-40 °C
Width
62.4mm
Product details
SEMiX® Dual IGBT Modules
Dual IGBT Modules from Semikron in modern low-profile SEMiX® packages suitable for half-bridge power control applications. The modules use solder-free spring or press-fit contacts to allow for a gate driver mounted directly on top of the module, saving space and offering greater connection reliability. Typical applications include AC inverter drives, UPS, Electronic Welding and Renewable Energy Systems.
For suitable press-fit gate driver modules see 122-0385 to 122-0387
• Low profile solder-free mounting package
• Trenchgate technology IGBTs
• VCE(sat) has positive temperature coefficient
• High short circuit current capability
• Press-fit pins as auxiliary contacts
• UL recognized
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
P.O.A.
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P.O.A.
Stock information temporarily unavailable.
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Stock information temporarily unavailable.
Technical documents
Specifications
Brand
Semikron DanfossMaximum Continuous Collector Current
469 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
20V
Configuration
Series
Package Type
SEMiX®3p
Mounting Type
Through Hole
Channel Type
N
Pin Count
11
Transistor Configuration
Series
Maximum Operating Temperature
+175 °C
Dimensions
150 x 62.4 x 17mm
Minimum Operating Temperature
-40 °C
Width
62.4mm
Product details
SEMiX® Dual IGBT Modules
Dual IGBT Modules from Semikron in modern low-profile SEMiX® packages suitable for half-bridge power control applications. The modules use solder-free spring or press-fit contacts to allow for a gate driver mounted directly on top of the module, saving space and offering greater connection reliability. Typical applications include AC inverter drives, UPS, Electronic Welding and Renewable Energy Systems.
For suitable press-fit gate driver modules see 122-0385 to 122-0387
• Low profile solder-free mounting package
• Trenchgate technology IGBTs
• VCE(sat) has positive temperature coefficient
• High short circuit current capability
• Press-fit pins as auxiliary contacts
• UL recognized
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.