Semikron Danfoss SKM150GAL12T4, Type N-Channel Fast IGBT4 Module, 232 A 1200 V, 5-Pin SEMITRANS2, Surface

RS Stock No.: 687-4951Brand: Semikron DanfossManufacturers Part No.: SKM150GAL12T4
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Technical documents

Specifications

Maximum Continuous Collector Current Ic

232A

Product Type

Fast IGBT4 Module

Maximum Collector Emitter Voltage Vceo

1200V

Package Type

SEMITRANS2

Mount Type

Surface

Channel Type

Type N

Pin Count

5

Switching Speed

180ns

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.4V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Length

94mm

Height

30.1mm

Standards/Approvals

IEC 60747-1

Series

GAL

Automotive Standard

No

Product details

Single IGBT Modules

SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS, SEMiX and SEMITOP packages in different topologies, current and voltage ratings.

IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

View all in IGBTs

Stock information temporarily unavailable.

P.O.A.

Semikron Danfoss SKM150GAL12T4, Type N-Channel Fast IGBT4 Module, 232 A 1200 V, 5-Pin SEMITRANS2, Surface

P.O.A.

Semikron Danfoss SKM150GAL12T4, Type N-Channel Fast IGBT4 Module, 232 A 1200 V, 5-Pin SEMITRANS2, Surface

Stock information temporarily unavailable.

quantityUnit price
1 - 4P.O.A.
5 - 9P.O.A.
10 - 49P.O.A.
50 - 99P.O.A.
100+P.O.A.

Technical documents

Specifications

Maximum Continuous Collector Current Ic

232A

Product Type

Fast IGBT4 Module

Maximum Collector Emitter Voltage Vceo

1200V

Package Type

SEMITRANS2

Mount Type

Surface

Channel Type

Type N

Pin Count

5

Switching Speed

180ns

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.4V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Length

94mm

Height

30.1mm

Standards/Approvals

IEC 60747-1

Series

GAL

Automotive Standard

No

Product details

Single IGBT Modules

SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS, SEMiX and SEMITOP packages in different topologies, current and voltage ratings.

IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.