Semikron SKM100GB12F4 Half Bridge IGBT Transistor Module, 100 A 1200 V

RS Stock No.: 248-6693Brand: SemikronManufacturers Part No.: SKM100GB12F4
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Technical documents

Specifications

Brand

Semikron

Maximum Continuous Collector Current

100 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±15.0V

Number of Transistors

2

Configuration

Half Bridge

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P.O.A.

Semikron SKM100GB12F4 Half Bridge IGBT Transistor Module, 100 A 1200 V

8

Available in multiples of 8
8P.O.A.
16P.O.A.
24P.O.A.
32P.O.A.
40P.O.A.
48P.O.A.
56P.O.A.
64P.O.A.
72P.O.A.
80P.O.A.
88P.O.A.
96P.O.A.
104P.O.A.
112P.O.A.
120P.O.A.

P.O.A.

Semikron SKM100GB12F4 Half Bridge IGBT Transistor Module, 100 A 1200 V
Stock information temporarily unavailable.

8

Available in multiples of 8
8P.O.A.
16P.O.A.
24P.O.A.
32P.O.A.
40P.O.A.
48P.O.A.
56P.O.A.
64P.O.A.
72P.O.A.
80P.O.A.
88P.O.A.
96P.O.A.
104P.O.A.
112P.O.A.
120P.O.A.
You may be interested in

Technical documents

Specifications

Brand

Semikron

Maximum Continuous Collector Current

100 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±15.0V

Number of Transistors

2

Configuration

Half Bridge

You may be interested in