STMicroelectronics BD139 NPN Transistor, 3 A, 80 V, 3-Pin SOT-32
Technical documents
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
3 A
Maximum Collector Emitter Voltage
80 V
Package Type
SOT-32
Mounting Type
Through Hole
Maximum Power Dissipation
1.25 W
Minimum DC Current Gain
100, 40, 63
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.8 x 7.8 x 2.7mm
Country of Origin
China
Product details
General Purpose NPN Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
P.O.A.
1
P.O.A.
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| quantity | Unit price |
|---|---|
| 1 - 9 | P.O.A. |
| 10 - 49 | P.O.A. |
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| 250+ | P.O.A. |
Technical documents
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
3 A
Maximum Collector Emitter Voltage
80 V
Package Type
SOT-32
Mounting Type
Through Hole
Maximum Power Dissipation
1.25 W
Minimum DC Current Gain
100, 40, 63
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.8 x 7.8 x 2.7mm
Country of Origin
China
Product details
General Purpose NPN Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.