Technical documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current
108 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Number of Transistors
1
Maximum Power Dissipation
385 W
Package Type
H²PAK-7
Mounting Type
Surface Mount
Pin Count
7
Country of Origin
China
P.O.A.
STMicroelectronics GH50H65DRB2-7AG IGBT, 108 A 650 V, 7-Pin H2PAK-7, Surface Mount
Select packaging type
Standard
1
P.O.A.
STMicroelectronics GH50H65DRB2-7AG IGBT, 108 A 650 V, 7-Pin H2PAK-7, Surface Mount
Stock information temporarily unavailable.
Select packaging type
Standard
1
Stock information temporarily unavailable.
Technical documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current
108 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Number of Transistors
1
Maximum Power Dissipation
385 W
Package Type
H²PAK-7
Mounting Type
Surface Mount
Pin Count
7
Country of Origin
China
