STMicroelectronics MJE350 PNP Transistor, -500 mA, -300 V, 3-Pin SOT-32
Technical documents
Specifications
Brand
STMicroelectronicsTransistor Type
PNP
Maximum DC Collector Current
-500 mA
Maximum Collector Emitter Voltage
-300 V
Package Type
SOT-32
Mounting Type
Through Hole
Maximum Power Dissipation
20.8 W
Minimum DC Current Gain
30
Transistor Configuration
Single
Maximum Collector Base Voltage
300 V
Maximum Emitter Base Voltage
3 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.8 x 7.8 x 2.7mm
Maximum Operating Temperature
+150 °C
Product details
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
P.O.A.
5
P.O.A.
5
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price |
|---|---|
| 5 - 20 | P.O.A. |
| 25 - 45 | P.O.A. |
| 50 - 95 | P.O.A. |
| 100 - 245 | P.O.A. |
| 250+ | P.O.A. |
Technical documents
Specifications
Brand
STMicroelectronicsTransistor Type
PNP
Maximum DC Collector Current
-500 mA
Maximum Collector Emitter Voltage
-300 V
Package Type
SOT-32
Mounting Type
Through Hole
Maximum Power Dissipation
20.8 W
Minimum DC Current Gain
30
Transistor Configuration
Single
Maximum Collector Base Voltage
300 V
Maximum Emitter Base Voltage
3 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.8 x 7.8 x 2.7mm
Maximum Operating Temperature
+150 °C
Product details
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.