STMicroelectronics STGB30H65DFB2 IGBT, 50 A 650 V, 3-Pin D2PAK (TO-263)

RS Stock No.: 204-9867Brand: STMicroelectronicsManufacturers Part No.: STGB30H65DFB2
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Technical documents

Specifications

Brand

STMicroelectronics

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

167 W

Number of Transistors

1

Package Type

D2PAK (TO-263)

Pin Count

3

Country of Origin

China

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P.O.A.

STMicroelectronics STGB30H65DFB2 IGBT, 50 A 650 V, 3-Pin D2PAK (TO-263)

1000

Available in multiples of 1000
1000P.O.A.
2000P.O.A.
3000P.O.A.
4000P.O.A.
5000P.O.A.
6000P.O.A.
7000P.O.A.
8000P.O.A.
9000P.O.A.
10000P.O.A.
11000P.O.A.
12000P.O.A.
13000P.O.A.
14000P.O.A.
15000P.O.A.

P.O.A.

STMicroelectronics STGB30H65DFB2 IGBT, 50 A 650 V, 3-Pin D2PAK (TO-263)
Stock information temporarily unavailable.

1000

Available in multiples of 1000
1000P.O.A.
2000P.O.A.
3000P.O.A.
4000P.O.A.
5000P.O.A.
6000P.O.A.
7000P.O.A.
8000P.O.A.
9000P.O.A.
10000P.O.A.
11000P.O.A.
12000P.O.A.
13000P.O.A.
14000P.O.A.
15000P.O.A.

Technical documents

Specifications

Brand

STMicroelectronics

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

167 W

Number of Transistors

1

Package Type

D2PAK (TO-263)

Pin Count

3

Country of Origin

China