STMicroelectronics STGW40H65DFB, Type N-Channel IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

RS Stock No.: 792-5795Brand: STMicroelectronicsManufacturers Part No.: STGW40H65DFB
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Technical documents

Specifications

Brand

STMicroelectronics

Maximum Continuous Collector Current Ic

80A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

283W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.3V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

20.15mm

Standards/Approvals

Lead (Pb) Free package, ECOPACK

Series

H

Automotive Standard

No

Product details

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

View all in IGBTs

Stock information temporarily unavailable.

P.O.A.

STMicroelectronics STGW40H65DFB, Type N-Channel IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 2
1P.O.A.
3P.O.A.
5P.O.A.
7P.O.A.
9P.O.A.
11P.O.A.
13P.O.A.
15P.O.A.
17P.O.A.
19P.O.A.
21P.O.A.
23P.O.A.
25P.O.A.
27P.O.A.
29P.O.A.

P.O.A.

STMicroelectronics STGW40H65DFB, Type N-Channel IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

Stock information temporarily unavailable.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 2
1P.O.A.
3P.O.A.
5P.O.A.
7P.O.A.
9P.O.A.
11P.O.A.
13P.O.A.
15P.O.A.
17P.O.A.
19P.O.A.
21P.O.A.
23P.O.A.
25P.O.A.
27P.O.A.
29P.O.A.

Technical documents

Specifications

Brand

STMicroelectronics

Maximum Continuous Collector Current Ic

80A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

283W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.3V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

20.15mm

Standards/Approvals

Lead (Pb) Free package, ECOPACK

Series

H

Automotive Standard

No

Product details

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.