STMicroelectronics, Type N-Channel IGBT 650 V, 3-Pin TO-3P, Through Hole

RS Stock No.: 168-8740Brand: STMicroelectronicsManufacturers Part No.: STGWT80H65DFB
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Technical documents

Specifications

Brand

STMicroelectronics

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

469W

Package Type

TO-3P

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Series

HB

Automotive Standard

No

Country of Origin

Korea, Republic Of

Product details

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

View all in IGBTs

Stock information temporarily unavailable.

P.O.A.

STMicroelectronics, Type N-Channel IGBT 650 V, 3-Pin TO-3P, Through Hole

1

Available in multiples of 30
1P.O.A.
31P.O.A.
61P.O.A.
91P.O.A.
121P.O.A.
151P.O.A.
181P.O.A.
211P.O.A.
241P.O.A.
271P.O.A.
301P.O.A.
331P.O.A.
361P.O.A.
391P.O.A.
421P.O.A.

P.O.A.

STMicroelectronics, Type N-Channel IGBT 650 V, 3-Pin TO-3P, Through Hole

Stock information temporarily unavailable.

1

Available in multiples of 30
1P.O.A.
31P.O.A.
61P.O.A.
91P.O.A.
121P.O.A.
151P.O.A.
181P.O.A.
211P.O.A.
241P.O.A.
271P.O.A.
301P.O.A.
331P.O.A.
361P.O.A.
391P.O.A.
421P.O.A.

Technical documents

Specifications

Brand

STMicroelectronics

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

469W

Package Type

TO-3P

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Series

HB

Automotive Standard

No

Country of Origin

Korea, Republic Of

Product details

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.