Technical documents
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
3 A
Maximum Collector Emitter Voltage
60 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
2 W
Minimum DC Current Gain
10
Transistor Configuration
Single
Maximum Collector Base Voltage
60 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.15 x 10.4 x 4.6mm
Maximum Operating Temperature
+150 °C
Product details
NPN Power Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
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P.O.A.
5
P.O.A.
5
Buy in bulk
quantity | Unit price |
---|---|
5 - 20 | P.O.A. |
25 - 45 | P.O.A. |
50 - 95 | P.O.A. |
100+ | P.O.A. |
Technical documents
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
3 A
Maximum Collector Emitter Voltage
60 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
2 W
Minimum DC Current Gain
10
Transistor Configuration
Single
Maximum Collector Base Voltage
60 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.15 x 10.4 x 4.6mm
Maximum Operating Temperature
+150 °C
Product details
NPN Power Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.