STMicroelectronics TIP35C NPN Transistor, 25 A, 100 V, 3-Pin TO-247

RS Stock No.: 251-3564Brand: STMicroelectronicsManufacturers Part No.: TIP35C
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Technical documents

Specifications

Transistor Type

NPN

Maximum DC Collector Current

25 A

Maximum Collector Emitter Voltage

100 V

Package Type

TO-247

Mounting Type

Through Hole

Maximum Power Dissipation

125 W

Minimum DC Current Gain

15

Transistor Configuration

Single

Maximum Collector Base Voltage

100 V

Maximum Emitter Base Voltage

5 V

Maximum Operating Frequency

3 MHz

Pin Count

3

Number of Elements per Chip

1

Dimensions

20.15 x 15.75 x 5.15mm

Maximum Operating Temperature

+150 °C

Country of Origin

China

Product details

TIP35C/ TIP36C Complementary power transistors

ST Microelectronics presents its TIP35C/ TIP36C series of complementary power transistors. This type of transistor is designed for general purpose power amplification and switching such as output or driver stages. The TIP35C/ TIP36C series are specially manufactured in planar technology with base island layout, this results in the transistors showing exceptionally high gain performance whilst also having a very low saturation voltage.

Features and Benefits

  • Low collector-emitter saturation voltage

  • Complementary NPN - PNP transistors

Applications

  • General purpose

  • Audio amplifier

  • Switching regulators, converters and power amplifiers

Bipolar Transistors, STMicroelectronics

A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.

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P.O.A.

STMicroelectronics TIP35C NPN Transistor, 25 A, 100 V, 3-Pin TO-247

P.O.A.

STMicroelectronics TIP35C NPN Transistor, 25 A, 100 V, 3-Pin TO-247
Stock information temporarily unavailable.

Buy in bulk

quantityUnit price
1 - 9P.O.A.
10 - 49P.O.A.
50 - 99P.O.A.
100 - 249P.O.A.
250+P.O.A.

Technical documents

Specifications

Transistor Type

NPN

Maximum DC Collector Current

25 A

Maximum Collector Emitter Voltage

100 V

Package Type

TO-247

Mounting Type

Through Hole

Maximum Power Dissipation

125 W

Minimum DC Current Gain

15

Transistor Configuration

Single

Maximum Collector Base Voltage

100 V

Maximum Emitter Base Voltage

5 V

Maximum Operating Frequency

3 MHz

Pin Count

3

Number of Elements per Chip

1

Dimensions

20.15 x 15.75 x 5.15mm

Maximum Operating Temperature

+150 °C

Country of Origin

China

Product details

TIP35C/ TIP36C Complementary power transistors

ST Microelectronics presents its TIP35C/ TIP36C series of complementary power transistors. This type of transistor is designed for general purpose power amplification and switching such as output or driver stages. The TIP35C/ TIP36C series are specially manufactured in planar technology with base island layout, this results in the transistors showing exceptionally high gain performance whilst also having a very low saturation voltage.

Features and Benefits

  • Low collector-emitter saturation voltage

  • Complementary NPN - PNP transistors

Applications

  • General purpose

  • Audio amplifier

  • Switching regulators, converters and power amplifiers

Bipolar Transistors, STMicroelectronics

A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.