Technical documents
Specifications
Brand
Taiwan SemiconductorTransistor Type
NPN
Maximum DC Collector Current
800 mA
Maximum Collector Emitter Voltage
45 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
625 mW
Minimum DC Current Gain
160
Transistor Configuration
Single
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
5.1 x 4.1 x 4.7mm
Product details
General Purpose NPN Transistors, Taiwan Semiconductor
Bipolar Transistors, Taiwan Semiconductor
P.O.A.
Standard
1
P.O.A.
Standard
1
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Technical documents
Specifications
Brand
Taiwan SemiconductorTransistor Type
NPN
Maximum DC Collector Current
800 mA
Maximum Collector Emitter Voltage
45 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
625 mW
Minimum DC Current Gain
160
Transistor Configuration
Single
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
5.1 x 4.1 x 4.7mm
Product details