Toshiba 2SA1943-O(Q) PNP Transistor, -15 A, -230 V, 3-Pin TO-3PL

RS Stock No.: 760-3117Brand: ToshibaManufacturers Part No.: 2SA1943-O(Q)
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Technical documents

Specifications

Brand

Toshiba

Transistor Type

PNP

Maximum DC Collector Current

-15 A

Maximum Collector Emitter Voltage

-230 V

Package Type

TO-3PL

Mounting Type

Through Hole

Maximum Power Dissipation

150 W

Minimum DC Current Gain

55

Transistor Configuration

Single

Maximum Collector Base Voltage

-230 V

Maximum Emitter Base Voltage

-5 V

Maximum Operating Frequency

30 MHz

Pin Count

3

Number of Elements per Chip

1

Dimensions

20.5 x 5.2 x 26mm

Maximum Operating Temperature

+150 °C

Country of Origin

Japan

Product details

PNP Power Transistors, Toshiba

Bipolar Transistors, Toshiba

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P.O.A.

Toshiba 2SA1943-O(Q) PNP Transistor, -15 A, -230 V, 3-Pin TO-3PL
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Available in multiples of 1.

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Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

P.O.A.

Toshiba 2SA1943-O(Q) PNP Transistor, -15 A, -230 V, 3-Pin TO-3PL
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Stock information temporarily unavailable.

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You may be interested in

Technical documents

Specifications

Brand

Toshiba

Transistor Type

PNP

Maximum DC Collector Current

-15 A

Maximum Collector Emitter Voltage

-230 V

Package Type

TO-3PL

Mounting Type

Through Hole

Maximum Power Dissipation

150 W

Minimum DC Current Gain

55

Transistor Configuration

Single

Maximum Collector Base Voltage

-230 V

Maximum Emitter Base Voltage

-5 V

Maximum Operating Frequency

30 MHz

Pin Count

3

Number of Elements per Chip

1

Dimensions

20.5 x 5.2 x 26mm

Maximum Operating Temperature

+150 °C

Country of Origin

Japan

Product details

PNP Power Transistors, Toshiba

Bipolar Transistors, Toshiba

You may be interested in