Technical documents
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
150 mA
Maximum Collector Emitter Voltage
50 V
Package Type
TO-236MOD (SC-59)
Mounting Type
Surface Mount
Maximum Power Dissipation
150 mW
Minimum DC Current Gain
70
Transistor Configuration
Single
Maximum Collector Base Voltage
60 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
80 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+125 °C
Dimensions
2.9 x 1.5 x 1.1mm
Country of Origin
Thailand
Product details
Small Signal NPN Transistors, Toshiba
Bipolar Transistors, Toshiba
Stock information temporarily unavailable.
Please check again later.
P.O.A.
50
P.O.A.
50
Technical documents
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
150 mA
Maximum Collector Emitter Voltage
50 V
Package Type
TO-236MOD (SC-59)
Mounting Type
Surface Mount
Maximum Power Dissipation
150 mW
Minimum DC Current Gain
70
Transistor Configuration
Single
Maximum Collector Base Voltage
60 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
80 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+125 °C
Dimensions
2.9 x 1.5 x 1.1mm
Country of Origin
Thailand
Product details