Technical documents
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
120 V
Package Type
SOT-323 (SC-70)
Mounting Type
Surface Mount
Maximum Power Dissipation
100 mW
Minimum DC Current Gain
200
Transistor Configuration
Single
Maximum Collector Base Voltage
120 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+125 °C
Dimensions
2 x 1.25 x 0.9mm
Country of Origin
Japan
Product details
Small Signal NPN Transistors, Toshiba
Bipolar Transistors, Toshiba
P.O.A.
1
P.O.A.
1
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Technical documents
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
120 V
Package Type
SOT-323 (SC-70)
Mounting Type
Surface Mount
Maximum Power Dissipation
100 mW
Minimum DC Current Gain
200
Transistor Configuration
Single
Maximum Collector Base Voltage
120 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+125 °C
Dimensions
2 x 1.25 x 0.9mm
Country of Origin
Japan
Product details