N-Channel MOSFET Transistor, 8 A, 1000 V, 3-Pin TO-3PN Toshiba 2SK1120(F)

RS Stock No.: 625-7870Brand: ToshibaManufacturers Part No.: 2SK1120(F)
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Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

1000 V

Package Type

TO-3PN

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.8 Ω

Channel Mode

Enhancement

Maximum Power Dissipation

150 W

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

120 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

15.9mm

Width

4.8mm

Minimum Operating Temperature

-55 °C

Height

19mm

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P.O.A.

N-Channel MOSFET Transistor, 8 A, 1000 V, 3-Pin TO-3PN Toshiba 2SK1120(F)
Select packaging type

P.O.A.

N-Channel MOSFET Transistor, 8 A, 1000 V, 3-Pin TO-3PN Toshiba 2SK1120(F)

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

quantityUnit price
1 - 24P.O.A.
25 - 99P.O.A.
100 - 249P.O.A.
250+P.O.A.
You may be interested in

Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

1000 V

Package Type

TO-3PN

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.8 Ω

Channel Mode

Enhancement

Maximum Power Dissipation

150 W

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

120 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

15.9mm

Width

4.8mm

Minimum Operating Temperature

-55 °C

Height

19mm

You may be interested in