Toshiba 2SK209-Y(TE85L,F) N-Channel JFET, 10 V, Idss 1.2 to 3.0mA, 3-Pin SOT-346 (SC-59)

RS Stock No.: 760-3126Brand: ToshibaManufacturers Part No.: 2SK209-Y(TE85L,F)
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Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Idss Drain-Source Cut-off Current

1.2 to 3.0mA

Maximum Drain Source Voltage

10 V

Maximum Gate Source Voltage

-30 V

Maximum Drain Gate Voltage

-50V

Transistor Configuration

Single

Configuration

Single

Mounting Type

Surface Mount

Package Type

SOT-346 (SC-59)

Pin Count

3

Dimensions

2.9 x 1.5 x 1.1mm

Maximum Operating Temperature

+125 °C

Length

2.9mm

Minimum Operating Temperature

-55 °C

Height

1.1mm

Width

1.5mm

Product details

N-channel JFET, Toshiba

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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P.O.A.

Toshiba 2SK209-Y(TE85L,F) N-Channel JFET, 10 V, Idss 1.2 to 3.0mA, 3-Pin SOT-346 (SC-59)
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Standard

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Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.

P.O.A.

Toshiba 2SK209-Y(TE85L,F) N-Channel JFET, 10 V, Idss 1.2 to 3.0mA, 3-Pin SOT-346 (SC-59)
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.

Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Idss Drain-Source Cut-off Current

1.2 to 3.0mA

Maximum Drain Source Voltage

10 V

Maximum Gate Source Voltage

-30 V

Maximum Drain Gate Voltage

-50V

Transistor Configuration

Single

Configuration

Single

Mounting Type

Surface Mount

Package Type

SOT-346 (SC-59)

Pin Count

3

Dimensions

2.9 x 1.5 x 1.1mm

Maximum Operating Temperature

+125 °C

Length

2.9mm

Minimum Operating Temperature

-55 °C

Height

1.1mm

Width

1.5mm

Product details

N-channel JFET, Toshiba

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.