Technical documents
Specifications
Transistor Type
NPN
Maximum DC Collector Current
4 A
Maximum Collector Emitter Voltage
400 V
Package Type
TO-220AB
Mounting Type
Through Hole
Maximum Power Dissipation
75 W
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
9 V
Maximum Operating Frequency
60 Hz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.3 x 4.7 x 16mm
Maximum Collector Emitter Saturation Voltage
1 V
Country of Origin
China
Product details
High Voltage Transistors, WeEn Semiconductors
Bipolar Transistors, WeEn Semiconductors
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P.O.A.
Standard
50
P.O.A.
Standard
50
Technical documents
Specifications
Transistor Type
NPN
Maximum DC Collector Current
4 A
Maximum Collector Emitter Voltage
400 V
Package Type
TO-220AB
Mounting Type
Through Hole
Maximum Power Dissipation
75 W
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
9 V
Maximum Operating Frequency
60 Hz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.3 x 4.7 x 16mm
Maximum Collector Emitter Saturation Voltage
1 V
Country of Origin
China
Product details