NXP PHE13009 NPN Transistor, 12 A, 700 V, 3-Pin TO-220AB

RS Stock No.: 801-5662PBrand: WeEn Semiconductors Co., LtdManufacturers Part No.: PHE13009
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Technical documents

Specifications

Brand

WeEn Semiconductors Co., Ltd

Transistor Type

NPN

Maximum DC Collector Current

12 A

Maximum Collector Emitter Voltage

700 V

Package Type

TO-220AB

Mounting Type

Through Hole

Maximum Power Dissipation

80 W

Transistor Configuration

Single

Maximum Collector Base Voltage

700 V

Maximum Operating Frequency

60 Hz

Pin Count

3

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Dimensions

10.3 x 4.5 x 15.8mm

Maximum Collector Emitter Saturation Voltage

2 V

Product details

High Voltage Transistors, WeEn Semiconductors

Bipolar Transistors, WeEn Semiconductors

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P.O.A.

NXP PHE13009 NPN Transistor, 12 A, 700 V, 3-Pin TO-220AB
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Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 1
5P.O.A.
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20P.O.A.
25P.O.A.
30P.O.A.
35P.O.A.
40P.O.A.
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50P.O.A.
55P.O.A.
60P.O.A.
65P.O.A.
70P.O.A.
75P.O.A.

P.O.A.

NXP PHE13009 NPN Transistor, 12 A, 700 V, 3-Pin TO-220AB
Stock information temporarily unavailable.
Select packaging type

Production pack (Tube)

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 1
5P.O.A.
10P.O.A.
15P.O.A.
20P.O.A.
25P.O.A.
30P.O.A.
35P.O.A.
40P.O.A.
45P.O.A.
50P.O.A.
55P.O.A.
60P.O.A.
65P.O.A.
70P.O.A.
75P.O.A.
You may be interested in

Technical documents

Specifications

Brand

WeEn Semiconductors Co., Ltd

Transistor Type

NPN

Maximum DC Collector Current

12 A

Maximum Collector Emitter Voltage

700 V

Package Type

TO-220AB

Mounting Type

Through Hole

Maximum Power Dissipation

80 W

Transistor Configuration

Single

Maximum Collector Base Voltage

700 V

Maximum Operating Frequency

60 Hz

Pin Count

3

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Dimensions

10.3 x 4.5 x 15.8mm

Maximum Collector Emitter Saturation Voltage

2 V

Product details

High Voltage Transistors, WeEn Semiconductors

Bipolar Transistors, WeEn Semiconductors

You may be interested in