SiC N-Channel MOSFET, 115 A, 1200 V, 4-Pin TO-247-4 Wolfspeed C3M0016120K

RS Stock No.: 192-3367Brand: WolfspeedManufacturers Part No.: C3M0016120K
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

115 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

16 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.6V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

556 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, 19 V

Width

5.21mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

SiC

Length

16.13mm

Typical Gate Charge @ Vgs

211 nC @ 4/15V

Minimum Operating Temperature

-40 °C

Height

23.6mm

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P.O.A.

SiC N-Channel MOSFET, 115 A, 1200 V, 4-Pin TO-247-4 Wolfspeed C3M0016120K

P.O.A.

SiC N-Channel MOSFET, 115 A, 1200 V, 4-Pin TO-247-4 Wolfspeed C3M0016120K
Stock information temporarily unavailable.

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

115 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

16 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.6V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

556 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, 19 V

Width

5.21mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

SiC

Length

16.13mm

Typical Gate Charge @ Vgs

211 nC @ 4/15V

Minimum Operating Temperature

-40 °C

Height

23.6mm