SiC N-Channel MOSFET, 11 A, 900 V, 7-Pin D2PAK Wolfspeed C3M0280090J

RS Stock No.: 192-3382Brand: WolfspeedManufacturers Part No.: C3M0280090J
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

900 V

Package Type

TO-263-7

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, 18 V

Maximum Operating Temperature

+150 °C

Transistor Material

SiC

Length

10.23mm

Typical Gate Charge @ Vgs

9.5 nC @ 4/15V

Width

9.12mm

Number of Elements per Chip

1

Height

4.57mm

Minimum Operating Temperature

-55 °C

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P.O.A.

SiC N-Channel MOSFET, 11 A, 900 V, 7-Pin D2PAK Wolfspeed C3M0280090J

P.O.A.

SiC N-Channel MOSFET, 11 A, 900 V, 7-Pin D2PAK Wolfspeed C3M0280090J
Stock information temporarily unavailable.

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

900 V

Package Type

TO-263-7

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, 18 V

Maximum Operating Temperature

+150 °C

Transistor Material

SiC

Length

10.23mm

Typical Gate Charge @ Vgs

9.5 nC @ 4/15V

Width

9.12mm

Number of Elements per Chip

1

Height

4.57mm

Minimum Operating Temperature

-55 °C