Technical documents
Specifications
Brand
NexperiaTransistor Type
PNP
Maximum Continuous Collector Current
-1 A
Maximum Collector Emitter Voltage
45 V
Maximum Emitter Base Voltage
-5 V
Package Type
SOT-89
Mounting Type
Surface Mount
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
2
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
-1.9 V
Maximum Collector Base Voltage
-60 V
Maximum Collector Emitter Saturation Voltage
-1.3 V
Maximum Collector Cut-off Current
-50nA
Height
1.6mm
Width
2.6mm
Dimensions
4.6 x 2.6 x 1.6mm
Maximum Operating Temperature
+150 °C
Length
4.6mm
Maximum Power Dissipation
1.3 W
Minimum Operating Temperature
-65 °C
Product details
Darlington Transistors, Nexperia
Bipolar Transistors, Nexperia
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P.O.A.
Standard
10
P.O.A.
Standard
10
Technical documents
Specifications
Brand
NexperiaTransistor Type
PNP
Maximum Continuous Collector Current
-1 A
Maximum Collector Emitter Voltage
45 V
Maximum Emitter Base Voltage
-5 V
Package Type
SOT-89
Mounting Type
Surface Mount
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
2
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
-1.9 V
Maximum Collector Base Voltage
-60 V
Maximum Collector Emitter Saturation Voltage
-1.3 V
Maximum Collector Cut-off Current
-50nA
Height
1.6mm
Width
2.6mm
Dimensions
4.6 x 2.6 x 1.6mm
Maximum Operating Temperature
+150 °C
Length
4.6mm
Maximum Power Dissipation
1.3 W
Minimum Operating Temperature
-65 °C
Product details