NXP BF510,215 N-Channel JFET, 20 V, Idss 0.7 to 3.0mA, 3-Pin SOT-23

RS Stock No.: 166-0535Brand: NXPManufacturers Part No.: BF510,215
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Technical documents

Specifications

Brand

NXP

Channel Type

N

Idss Drain-Source Cut-off Current

0.7 to 3.0mA

Maximum Drain Source Voltage

20 V

Maximum Drain Gate Voltage

20V

Transistor Configuration

Single

Configuration

Single

Mounting Type

Surface Mount

Package Type

SOT-23 (TO-236AB)

Pin Count

3

Dimensions

3 x 1.4 x 1mm

Height

1mm

Width

1.4mm

Minimum Operating Temperature

-65 °C

Maximum Operating Temperature

+150 °C

Length

3mm

Country of Origin

China

Product details

N-channel JFET, NXP

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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P.O.A.

NXP BF510,215 N-Channel JFET, 20 V, Idss 0.7 to 3.0mA, 3-Pin SOT-23

3000

Available in multiples of 3000
3000P.O.A.
6000P.O.A.
9000P.O.A.
12000P.O.A.
15000P.O.A.
18000P.O.A.
21000P.O.A.
24000P.O.A.
27000P.O.A.
30000P.O.A.
33000P.O.A.
36000P.O.A.
39000P.O.A.
42000P.O.A.
45000P.O.A.

P.O.A.

NXP BF510,215 N-Channel JFET, 20 V, Idss 0.7 to 3.0mA, 3-Pin SOT-23
Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000P.O.A.
6000P.O.A.
9000P.O.A.
12000P.O.A.
15000P.O.A.
18000P.O.A.
21000P.O.A.
24000P.O.A.
27000P.O.A.
30000P.O.A.
33000P.O.A.
36000P.O.A.
39000P.O.A.
42000P.O.A.
45000P.O.A.

Technical documents

Specifications

Brand

NXP

Channel Type

N

Idss Drain-Source Cut-off Current

0.7 to 3.0mA

Maximum Drain Source Voltage

20 V

Maximum Drain Gate Voltage

20V

Transistor Configuration

Single

Configuration

Single

Mounting Type

Surface Mount

Package Type

SOT-23 (TO-236AB)

Pin Count

3

Dimensions

3 x 1.4 x 1mm

Height

1mm

Width

1.4mm

Minimum Operating Temperature

-65 °C

Maximum Operating Temperature

+150 °C

Length

3mm

Country of Origin

China

Product details

N-channel JFET, NXP

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.